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feb 2013 (hvm-1068) 1 < hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules CM1200DC-34S ? i c 1200a ? v ces 1700v ? 2-element in a pack ? insulated type ? cstbt?(iii) / soft recovery diode ? alsic baseplate application traction drives, high reliability c onverters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 2 maximum ratings symbol item conditions ratings unit v ces collector-emitter voltage v ge = 0v 1700 v v ges gate-emitter voltage v ce = 0v, t j = 25 c 20 v i c dc, t c = 110 c 1200 a i crm collector current pulse (note 1) 2400 a i e dc 1200 a i erm emitter current (note 2) pulse (note 1) 2400 a p tot maximum power dissipation (note 3) t c = 25c, igbt part 6750 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1 min. 4000 v v e partial discharge extinction voltage rms, sinusoidal, f = 60hz, q pd 10 pc 1320 v t jop operating junction temperature ? 50 ~ +150 c t stg storage temperature ? 50 ~ +150 c t psc short circuit pulse width v cc = 1200v, v ce v ces , v ge =15v, t j =150c 10 ? s electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 4.0 t j = 125c ? 1.5 ? i ces collector cutoff current v ce = v ces , v ge = 0v t j = 150c ? 7.0 ? ma v ge(th) gate-emitter threshold voltage v ce = 10 v, i c = 120 ma, t j = 25c 5.4 6.0 6.6 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? 0.5 ? 0.5 a c ies input capacitance ? 216 ? nf c oes output capacitance ? 8.0 ? nf c res reverse transfer capacitance v ce = 10 v, v ge = 0 v, f = 100 khz t j = 25c ? 1.6 ? nf q g total gate charge v cc = 850v, i c = 1200a, v ge = 15v ? 12.0 ? c t j = 25c ? 1.95 ? t j = 125c ? 2.25 2.70 v cesat collector-emitter saturation voltage i c = 1200 a (note 4) v ge = 15 v t j = 150c ? 2.30 ? v t j = 25c ? 0.60 ? t j = 125c ? 0.60 ? t d(on) turn-on delay time t j = 150c ? 0.60 ? s t j = 25c ? 0.16 ? t j = 125c ? 0.17 ? t r turn-on rise time t j = 150c ? 0.18 ? s t j = 25c ? 260 ? t j = 125c ? 340 ? e on(10%) turn-on switching energy (note 5) t j = 150c ? 370 ? mj t j = 25c ? 300 ? t j = 125c ? 390 ? e on turn-on switching energy (note 6) v cc = 850 v i c = 1200 a v ge = 15 v r g(on) = 1.3 ? l s = 70 nh inductive load t j = 150c ? 420 ? mj
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 3 electrical characteristics (continuation) limits symbol item conditions min typ max unit t j = 25c ? 1.20 ? t j = 125c ? 1.30 ? t d(off) turn-off delay time t j = 150c ? 1.32 ? s t j = 25c ? 0.12 ? t j = 125c ? 0.15 ? t f turn-off fall time t j = 150c ? 0.17 ? s t j = 25c ? 200 ? t j = 125c ? 280 ? e off(10%) turn-off switching energy (note 5) t j = 150c ? 310 ? mj t j = 25c ? 260 ? t j = 125c ? 360 ? e off turn-off switching energy (note 6) v cc = 850 v i c = 1200 a v ge = 15 v r g(off) = 3.3 ? l s = 70 nh inductive load t j = 150c ? 400 ? mj t j = 25c ? 2.60 ? t j = 125c ? 2.30 3.00 v ec emitter-collector voltage (note 2) i e = 1200 a (note 4) v ge = 0 v t j = 150c ? 2.20 ? v t j = 25c ? 0.22 ? t j = 125c ? 0.32 ? t rr reverse recovery time (note 2) t j = 150c ? 0.38 ? s t j = 25c ? 750 ? t j = 125c ? 850 ? i rr reverse recovery current (note 2) t j = 150c ? 840 ? a t j = 25c ? 150 ? t j = 125c ? 340 ? q rr reverse recovery charge (note 2) t j = 150c ? 400 ? c t j = 25c ? 70 ? t j = 125c ? 170 ? e rec(10%) reverse recovery energy (note 2) (note 5) t j = 150c ? 210 ? mj t j = 25c ? 80 ? t j = 125c ? 180 ? e rec reverse recovery energy (note 2) (note 6) v cc = 850 v i c = 1200 a v ge = 15 v r g(on) = 1.3 ? l s = 70 nh inductive load t j = 150c ? 230 ? mj thermal characteristics limits symbol item conditions min typ max unit r th(j-c)q junction to case, igbt part (per 1/2 module) ? ? 18.5 k/kw r th(j-c)d thermal resistance junction to case, fwdi part (per 1/2 module) ? ? 42.0 k/kw r th(c-s) contact thermal resistance case to heat sink, 1/2 module o grease = 1w/m k, d (c-s) = 100 p m ? 16.0 ? k/kw
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 4 mechanical characteristics limits symbol item conditions min typ max unit m t m8 : main terminals screw 7.0 ? 22.0 nm m s m6 : mounting screw 3.0 ? 6.0 nm m t mounting torque m4 : auxiliary terminals screw 1.0 ? 3.0 nm m mass ? 0.8 ? kg cti comparative tracking index 600 ? ? ? d a clearance 9.5 ? ? mm d s creepage distance 15.0 ? ? mm l p ce parasitic stray inductance ? 22 ? nh r cc?+ee? internal lead resistance t c = 25c, 1/2 module ? 0.16 ? m ? r g internal gate resistance t c = 25c, 1/2 module ? 0.28 ? ? ? note1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t jopmax rating. 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwd i ). 3. junction temperature (t j ) should not exceed t jopmax rating . 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. definition of all items is according to iec 60747, unless otherwise specified.
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 5 performance curves output characteristics (typical) 0 500 1000 1500 2000 2500 0123456 collector - emitter voltage [v] collector current [a] t j = 125c v ge = 15v v ge = 13v v ge = 9v v ge = 11v v ge = 17v collector-emitter saturation voltag e characteristics (typical) 0 500 1000 1500 2000 2500 01234 collector-emitter saturation voltage [v] collector current [a] t j = 25c v ge = 15v t j = 150c t j = 125c transfer characteristics (typical) 0 500 1000 1500 2000 2500 0 5 10 15 gate - emitter voltage [v] collector current [a] t j = 125c / 150c t j = 25c v ce = 10v free-wheel diode forward characteristics (typical) 0 500 1000 1500 2000 2500 01234 emitter-collector voltage [v] emitter current [a] t j = 25c t j = 125c t j = 150c
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 6 performance curves capacitance characteristics (typical) 0.1 1 10 100 1000 0.1 1 10 100 collector-emitter voltage [v] capacitance [nf] c ies v ge = 0v, t j = 25c f = 100khz c oes c res half-bridge switching energy characteristics (typical) 0 200 400 600 800 1000 1200 0 500 1000 1500 2000 2500 collector current [a] switching energies [mj] v cc = 850v, v ge = 15v r g(on) = 1.3 ? , r g(off) = 3.3 ? t j = 125c, inductive load e off e on e rec gate charge characteristics (typical) -15 -10 -5 0 5 10 15 20 0 5 10 15 gate charge [c] gate-emitter voltage [v] v ce = 850v, i c = 1200a t j = 25c half-bridge switching energy characteristics (typical) 0 200 400 600 800 1000 1200 0 500 1000 1500 2000 2500 collector current [a] switching energies [mj] v cc = 850v, v ge = 15v r g(on) = 1.3 ? , r g(off) = 3.3 ? t j = 150c, inductive load e off e on e rec
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 7 performance curves half-bridge switching energy characteristics (typical) 0 500 1000 1500 2000 02468 gate resistance [ ? ] switching energies [mj] v cc = 850v, i c = 1200a v ge = 15v, t j = 125c inductive load e on e rec half-bridge switching energy characteristics (typical) 0 500 1000 1500 2000 02468 gate resistance [ ? ] switching energies [mj] v cc = 850v, i c = 1200a v ge = 15v, t j = 150c inductive load e on e rec half-bridge switching energy characteristics (typical) 0 200 400 600 800 1000 0 5 10 15 20 gate resistance [ ? ] switching energies [mj] v cc = 850v, i c = 1200a v ge = 15v, t j = 125c inductive load e off half-bridge switching energy characteristics (typical) 0 200 400 600 800 1000 0 5 10 15 20 gate resistance [ ? ] switching energies [mj] v cc = 850v, i c = 1200a v ge = 15v, t j = 150c inductive load e off
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 8 half-bridge switching time characteristics (typical) 0.01 0.1 1 10 100 1000 10000 collector current [a] switching times [s] t f v cc = 850v, v ge = 15v r g(on) = 1.3 ? , r g(off) = 3.3 ? t j = 125c, inductive load t r t d(on) t d(off) free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] t rr i rr v cc = 850v, v ge = 15v r g(on) = 1.3 ? , l s = 70nh t j = 125c, inductive load half-bridge switching time characteristics (typical) 0.01 0.1 1 10 100 1000 10000 collector current [a] switching times [s] t f v cc = 850v, v ge = 15v r g(on) = 1.3 ? , r g(off) = 3.3 ? t j = 150c, inductive load t r t d(on) t d(off) free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] t rr i rr v cc = 850v, v ge = 15v r g(on) = 1.3 ? , l s = 70nh t j = 150c, inductive load
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 9 performance curves transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10 time [s] normalized transient thermal impedance r th(j-c)q = 18.5k/kw r th(j-c)d = 42.0k/kw reverse bias safe operating area (rbsoa) 0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 collector-emitter voltage [v] collector current [a] v cc ? 1200v, v ge = 15v t j = 150c, r g(off) ? 3.3 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? exp1 1 )( )( ? i t n i i cjth rz t 1 2 3 4 r i [k/kw] : 0.0096 0.1893 0.4044 0.3967 ? i [sec.] : 0.0001 0.0058 0.0602 0.3512 short circuit safe operating area (scsoa) 0 2000 4000 6000 8000 10000 0 500 1000 1500 2000 collector-emitter voltage [v] collector current [a] v cc ? 1200v, v ge = 15v r g(on) ??? 1.3 ? , r g(off) ??? 3.3 ? t j = 150c, tpsc ? 10s
< hvigbt modules > CM1200DC-34S high power switching use insulated type 5th-version hvigbt (high voltage insulated gate bipolar transistor) modules feb 2013 (hvm-1068) 10 performance curves free-wheel diode reverse recovery safe operating area (rrsoa) 0 500 10 00 15 00 20 00 25 00 30 00 0 5 00 1 000 1 50 0 20 00 collecto r-emitter voltage [v] reverse recovery current [a] v cc ? 12 00 v, di /d t ? 72 00 a/ s t j = 1 50 c
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